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Kirk Rowe, Ph.D

Attorney at Law

The John Marshall Law School
J.D. 2009
Oregon State University
Ph.D. Physics 2005
Southern Illinois University
M.S. Physics 1996
Elmhurst College
B.S. Physics & Mathematics 1991
The United States Patent and Trademark Office

Dr. Kirk D. Rowe received his J.D. degree with a certificate in intellectual property law from The John Marshall Law School in 2009, where he also served as a board member for The John Marshall Review of Intellectual Property Law.

Dr. Rowe earned a dual B.S. degree from Elmhurst College in physics and mathematics before going on to earn his M.S. degree from Southern Illinois University, where he conducted thesis research within the Department of Chemistry and Biochemistry developing and testing stochastic models designed to estimate the number of components in saturated chemical separations.  Dr. Rowe received his Ph.D. degree from Oregon State University in 2005, where he studied the quantum-mechanical effects that govern the micro-optic and nano-electronic technologies that will eventually replace today’s bulk-effect transistor and microprocessor designs.  At Oregon State, Dr. Rowe developed and applied a specialized computational procedure to discover the previously undocumented physical phenomenon of quantum pinching.  Dr. Rowe also participated in the creation of Oregon State’s computational physics program.

In addition to teaching, Dr. Rowe also received two research appointments at Argonne National Laboratory where he assisted in the design of superconducting quadrupole focusing magnets using finite element analysis for both the Advanced Photon Source and the High-Current Ion Beam Accelerator projects.

Dr. Rowe began his legal career in 2009 prosecuting patents and trademarks with the U.S. Patent and Trademark Office. As a registered patent attorney, Dr. Rowe has drafted and prosecuted patent applications for various technologies, including cellular communications networks, mobile communication devices, in-wheel electric automobile motors, microprocessor fabrication, and semiconductor memory devices.

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